BFL4007 no. a1689-1/5 features ? reverse recovery time t rr =95ns (typ) ? on-resistance r ds (on)=0.52 (typ) ? input capacitance ciss=1200pf (typ) ? 10v drive speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 600 v gate-to-source voltage v gss 30 v drain current (dc) i dc *1 limited only by maximum temperature tch=150 c 14 a i dpack *2 tc=25 c (sanyo?s ideal heat dissipation condition)*3 8.7 a drain current (pulse) i dp pw 10 s, duty cycle 1% 49 a source-to-drain diode forward current (dc) i s 14 a source-to-drain diode forward current (pulse) i sp pw 10 s, duty cycle 1% 49 a allowable power dissipation p d 2.0 w tc=25 c (sanyo?s ideal heat dissipation condition*)3 40 w note : * 1 shows chip capability continued on next page. * 2 package limited * 3 sanyo?s condition is radiation from backside. the method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. package dimensions unit : mm (typ) 7509-002 60210qb tk im tc-00002337 sanyo semiconductors data sheet BFL4007 n-channel silicon mosfet general-purpose switching device applications http:// semicon.sanyo.com/en/network ordering number : ena1689 product & package information ? package : to-220fi(ls) ? jeita, jedec : sc-67, sot-186a, to-220f ? minimum packing quantity : 100/bag, 50/magazine marking 16.0 14.0 3.6 3.5 7.2 16.1 0.7 2.55 2.55 2.4 1.2 0.9 0.75 0.6 1.2 4.5 2.8 123 10.0 3.2 1 : gate 2 : drain 3 : source sanyo : to-220fi(ls) fl4007 lot no.
BFL4007 no. a1689-2/5 continued from preceding page. parameter symbol conditions ratings unit channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *4 e as 215 mj avalanche current *5 i av 8.5 a note : * 4 v dd =99v, l=5mh, i av =8.5a (fig.1) * 5 l 5mh, single pulse electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =10ma, v gs =0v 600 v zero-gate voltage drain current i dss v ds = 480 v, v gs =0v 100 a gate-to-source leakage current i gss v gs =30v, v ds =0v 100 na cutoff voltage v gs (off) v ds =10v, i d =1ma 35v forward transfer admittance | yfs | v ds =10v, i d = 7 a 4.3 8.5 s static drain-to-source on-state resistance r ds (on) i d = 7 a, v gs =10v 0.52 0.68 input capacitance ciss v ds =30v, f=1mhz 1200 pf output capacitance coss v ds =30v, f=1mhz 220 pf reverse transfer capacitance crss v ds =30v, f=1mhz 43 pf turn-on delay time t d (on) see fig.2 27 ns rise time t r see fig.2 72 ns turn-off delay time t d (off) see fig.2 122 ns fall time t f see fig.2 48 ns total gate charge qg v ds =200v, v gs =10v, i d =14a 46 nc gate-to-source charge qgs v ds =200v, v gs =10v, i d =14a 8.6 nc gate-to-drain ?miller? charge qgd v ds =200v, v gs =10v, i d =14a 26.4 nc diode forward voltage v sd i s =14a, v gs =0v 1.1 1.5 v reverse recovery time t rr see fig.3 i s =14a, v gs =0v, di/dt=100a/ s 95 ns reverse recovery charge q rr 250 nc fig.1 avalanche resistance test circuit fig.2 switching time test circuit 50 50 rg v dd l 10v 0v BFL4007 g s d p. g r gs =50 g s d i d =7a r l =28.6 v dd =200v v out BFL4007 v in pw=10 s d.c. 0.5% 10v 0v v in
BFL4007 no. a1689-3/5 fig.3 t rr reverse recovery resistance test circuit v dd =50v BFL4007 500 h driver mosfet g s d drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- static drain-to-source on-state resistance, r ds (on) -- case temperature, tc -- c drain current, i d -- a diode forward voltage, v sd -- v source current, i s -- a gate-to-source voltage, v gs -- v i d -- v ds i d -- v gs r ds (on) -- tc r ds (on) -- v gs i s -- v sd | y fs | -- i d forward transfer admittance, | y fs | -- s it15477 it15478 it15479 it15480 --50 --25 0 25 50 75 100 125 150 0 0 35 30 20 25 10 30 525 20 15 15 10 5 0 40 35 25 30 20 15 10 5 020 18 16 412 210 68 14 15v 10v 0 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 tc=25 c v gs =20v v ds =20v v gs =5v it15482 0 0.2 0.4 0.6 0.8 1.6 1.4 1.2 1.0 0.01 0.1 10 7 5 3 2 3 2 7 5 3 2 2 1.0 7 5 3 it15481 25 c --25 c tc=75 c 0.1 1.0 23 57 23 57 10 23 5 10 1.0 2 5 7 3 5 7 3 2 3 v ds =10v tc= --25 c 75 c v gs =0v tc= --25 c 25 c 75 c 35 0 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 15 13 9 711 i d =7a tc=75 c 25 c --25 c v gs =10v, i d =7a 6v 25 c 8v
BFL4007 no. a1689-4/5 total gate charge, qg -- nc gate-to-source voltage, v gs -- v v gs -- qg a s o p d -- tc drain-to-source voltage, v ds -- v drain current, i d -- a case temperature, tc -- c allowable power dissipation, p d -- w 0 0 25 50 75 100 125 150 100 80 60 20 40 120 175 e as -- ta avalanche energy derating factor -- % ambient temperature, ta -- c p d -- ta ambient temperature, ta -- c allowable power dissipation, p d -- w it10478 0 0 20 40 60 80 100 120 2.5 140 160 2.0 1.5 1.0 0.5 it15487 it15488 0 0 20 40 60 80 100 140 120 5 10 25 20 45 40 35 30 15 160 it15485 0 0 1 2 3 4 5 6 7 8 50 10 9 20 40 10 30 v ds =200v i d =14a drain current, i d -- a switching time, sw time -- ns sw time -- i d drain-to-source voltage, v ds -- v ciss, coss, crss -- pf ciss, coss, crss -- v ds it15483 10 100 1000 3 2 2 5 7 3 7 5 0.1 1.0 10 23 57 2 3 2 35 57 v dd =200v v gs =10v t d (off) t r t f t d (on) 0 7 100 10 1000 5 3 2 7 5 3 2 5 3 2 50 10 53040 20 15 35 45 25 it15484 f=1mhz ciss coss crss it15486 0.01 0.1 2 3 5 7 2 1.0 3 5 7 2 0.1 10 s 100ms 10ms 1ms dc operation 1.0 10 100 1000 23 57 23 57 7 23 5 23 57 100 3 5 7 2 operation in this area is limited by r ds (on). i dp =49a (pw 10 s) 2 10 3 5 7 100 s tc=25 c single pulse i dc (*1)=14a i dpack (*2)=8.7a * 1. shows chip capability * 2. sanyo's ideal heat dissipation condition
BFL4007 no. a1689-5/5 ps this catalog provides information as of june, 2010. speci cations and information herein are subject to change without notice. note on usage : since the BFL4007 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
|
